In-situ wafer parameter measurement method employing a hot susceptor as a reflected light source

摘要

A semiconductor wafer (160) temperature measurement method takes advantage of the tight control of the surface conditions and temperature of a hot susceptor 162, which tight control provides known and reproducible radiation emissions from the hot susceptor. The known amount of radiation emitted by the hot susceptor is employed as a stable radiation source (166) for making precise reflectance and emission measurements of the semiconductor wafer.