| 摘要 |
A semiconductor device is designed by disposing a plurality of cells. The semiconductor device is equipped with a semiconductor substrate 1, transistors formed in the semiconductor substrate, a first wiring pattern 100 and a second wiring pattern 200 formed respectively in a first cell and a second cell disposed adjacent to each other in a X direction in a wiring layer disposed over the semiconductor substrate in layer, the first wiring pattern 100 and the second wiring pattern 200 having portions extending in parallel with each other in a Y direction perpendicular to the X direction, and an interlayer dielectric layer formed as a lower layer of the wiring layer, the interlayer dielectric layer having openings formed at locations corresponding to a position 11 or 12 of the first wiring pattern and a position 22 or 21 of the second wiring pattern, respectively.
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