| 摘要 |
A semiconductor device 1000 in accordance with the present invention has a structure having multiple wiring layers, and includes a bonding pad 40a, dummy wiring forming regions 35 including dummy wirings 30, and dummy wiring prohibiting regions 15 where dummy wirings are not formed. The dummy wiring prohibiting regions 15 are provided at least below a region where the bonding pad 40a is formed.
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