| 摘要 |
<p>The gain-bandwidth (GBW) limitation problem inherent in all amplifiers is overcome to provide wideband amplifiers with specified characteristics for the transfer function. Parasitic capacitances of transistors are absorbed or incorporated into the design of the passive networks (22), which are inserted between the gain staps of the amplifier. The component values are determined based on conventional low-pass filter structures. A prototype CMOS transimpedance amplifier implemented using the developed technique achieves over 9GHz bandwidth and 54dB transimpedance gain from a O.5pF photo-diode capacitance.</p> |
