GROUP III NITRIDE SEMICONDUCTOR FILM AND ITS PRODUCTION METHOD

摘要

A group III nitride semiconductor film involving few lattice defects and having a large thickness, and its production method are disclosed. A quartz substrate and a group III nitride semiconductor are placed on the top of a lower electrode, and dry−etching is conducted. Nano−pillars (50) are formed on the top of the group III nitride semiconductor (101). Another group III nitride semiconductor film (53) is deposited on the nano−pillars (50).