发明名称 |
METHOD OF MANUFACTURE FOR 80 NANOMETER DIAMETER RESONANT TUNNELING DIODE WITH IMPROVED PEAK-TO-VALLEY RATIO AND RESONANT TUNNELING DIODE THEREFROM |
摘要 |
A sub-micron, on the order of 80-nanometer diameter, resonant tunneling diode having a peak-to-valley ratio of approximately 5.1 to 1, and a method for its manufacture. The invention is unique in that its performance characteristics are unmatched in comparably sized resonant tunneling diodes. Further, the polyamide passivation and planerization methodology provides unexpected processing advantages with respect to application in the fabrication of resonant tunneling diodes. The invention includes a substrate (706) that serves as a foundation for bottom contact layer (708) and a polyamide (700) coating. An ohmic metal contact (702) and emitter metal contact (704) protrude above the polyamide (700) coating exposing the ohmic metal contact (702) and emitter metal contact (704). The contacts are capped with an etch resistant coating (710) thus allowing for the polyamide etch, and other etching processes without adversely affecting the contacts.
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申请公布号 |
WO03015283(A2) |
申请公布日期 |
2003.02.20 |
申请号 |
WO2002US25241 |
申请日期 |
2002.08.07 |
申请人 |
HRL LABORATORIES, LLC;THOMAS, STEPHEN;CHOW, DAVID;ELLIOTT, KEN |
发明人 |
THOMAS, STEPHEN;CHOW, DAVID;ELLIOTT, KEN |
分类号 |
H01L21/329;H01L29/88;(IPC1-7):H03M/ |
主分类号 |
H01L21/329 |
代理机构 |
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主权项 |
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地址 |
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