| 摘要 |
The invention relates to a method for fabricating a capacitor of a semiconductor device with greater capacitance by adding an aluminum containing compound in the process of depositing an amorphous Ta2O5 layer in a LPCVD chamber, differently from the conventional method, thereby obtaining a material Ta2O5-Al2O3 for forming a dielectric layer with higher structural stability and dielectric constant than the Ta2O5 layer.
|
