| 摘要 |
An integrated tunable laser structure comprising a substrate made of semiconductor material, the substrate (1; FIG. 2) comprising a first (2), a second (3), and a third (4) section. The first section (2) provides a low-selective interferometric filtering together with an amplification of a light wave resonating in the laser structure. The second section (3) provides continuous fine-tuning and phase adjustment of the light wave, and the third section (4) provides a wavelength selective reflection of the light wave. Each section allows current injection, wherein a current into the first section (2) causes a wavelength shift of the low-selective interferometric filtering, a current into the second section (3) causes a wavelength shift of resonator modes, and a current into the third section (4) causes a wavelength shift of the wavelength selective reflection.
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