发明名称 TUNABLE IMPEDANCE MATCHING CIRCUIT FOR RF POWER AMPLIFIER
摘要 <p>A tunable impedance matching circuit is provided for tuning an active device, such as, e.g., a field effect transistor, in a RF power amplifier circuit. The matching circuit includes an adjustable length transmission line for electrically coupling a RF signal between an active device and its source and a load. The transmission line, which has a length approximately equal to a quarter of a wavelength of the fundamental frequency of a RF signal being amplified, is adjusted to achieve selected performance characteristic(s) of the amplifier, such as, e.g., input return loss.</p>
申请公布号 WO2003015266(A1) 申请公布日期 2003.02.20
申请号 IB2002003174 申请日期 2002.08.09
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