Processing and cleaning method

摘要

The method according to the present invention enables to suppress damaging the reaction tubes and the wafer boat made of quarts, when cleaning the reaction vessel after the completion of film forming process for a polysilicon or titanium nitride film, thus the method reduces the running cost. After forming a polysilicon film on the semiconductor wafers, the empty wafer boat is placed in the reaction vessel. The interior atmosphere of the reaction vessel is maintained at temperatures in the range of 700 to 1000° C. A mixed gas prepared by diluting chlorine gas with nitrogen gas is supplied at a predetermined flow rate into the reaction vessel to remove the polysilicon film. A titanium nitride film can also be removed in the same manner.