Photoresist including a polymer obtained by polycondensation of at least one monomer with acid cleavable groups in its main chain useful in semiconductor technology, e.g. in microchip production

摘要

A photoresist including a polymer obtained by polycondensation of at least one monomer with acid cleavable groups in its main chain, where at least one of the monomers contains one or more fluorine or fluoroalkyl groups, a photoacid builder, and a solvent is new.