Manufacturing integrated memory circuit involves replacing defective memory cells on one side of substrate with functional cells on other side by connecting functional cells to other side

摘要

The method involves processing the front and rear sides of a semiconducting substrate (12) to produce memory cells (14,16) on both sides and replacing defective memory cells on one side of the substrate with functional cells on the other side by connecting (18,18') the functional cells to the other side of the substrate at an input/output circuit. AN Independent claim is also included for the following: an integrated memory circuit.