| 摘要 |
PURPOSE: To provide a method for growing a nitride semiconductor, capable of growing nitride semiconductor of proper crystal state on a crystalline nitride semiconductor substrate. CONSTITUTION: The method for growing the nitride semiconductor on the crystalline nitride semiconductor substrate comprises the steps of raising the temperature of the substrate, by starting a supply of a material gas to a surface of the substrate before the substrate exceeds 1,200°C to thereby start growing of the nitride semiconductor on the substrate. In this case, growing of the nitride semiconductor on the substrate is started, after the substrate reaches at 300°C. Furthermore, the supply of other material gas, except nitrogen source gas, is started after the supply of the nitrogen material gas is started before the substrate exceeds 1,200°C, so that growing of the nitride semiconductor on the substrate is started.
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