| 摘要 |
PURPOSE: A contamination control method for an embedded ferroelectric device fabrication process is provided to form a ferroelectric device together with a semiconductor integrated circuit without substantial risk of cross contamination through shared equipment(e.g., steppers, metrology tools, and the like) by integrating a ferroelectric device fabrication process with a standard semiconductor fabrication process. CONSTITUTION: Ferroelectric device contaminant substrates(e.g., Pb, Zr, Ti and Ir) that are incompatible with standard complementary metal oxide semiconductor(CMOS) fabrication processes are tightly controlled. Specific etch chemistries have been developed to remove incompatible substances from the backside and edge surfaces of the substrate after a ferroelectric device has been formed. In addition, a sacrificial layer may be disposed over the bottom and edge surfaces(and, in some embodiments, the front side edge exclusion zone surface) of the substrate to assist in the removal of difficult-to-etch contaminants(e.g., Ir).
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