发明名称 |
JUNCTION FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURE THEREOF |
摘要 |
<p>A junction field effect transistor (JFET) is provided that is capable of a high voltage resistance, high current switching operation, that operates with a low loss, and that has little variation. This JFET is provided with a gate region (2) of a second conductivity type provided on a surface of a semiconductor substrate, a source region (1) of a first conductivity type, a channel region (10) of the first conductivity type that adjoins the source region, a confining region (5) of the second conductivity type that adjoins the gate region and confines the channel region, a drain region (3) of the first conductivity type provided on a reverse face, and a drift region (4) of the first conductivity type that continuously lies in a direction of thickness of the substrate from a channel to a drain. A concentration of an impurity of the first conductivity type in the drift region and the channel region is lower than a concentration of an impurity of the first conductivity type in the source region and the drain region and a concentration of an impurity of the second conductivity type in the confining region. <IMAGE></p> |
申请公布号 |
EP1284496(A1) |
申请公布日期 |
2003.02.19 |
申请号 |
EP20000957106 |
申请日期 |
2000.09.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, SHIN;HIROTSU, KENICHI;MATSUNAMI, HIROYUKI;KIMOTO, TSUNENOBU |
分类号 |
H01L21/337;H01L29/24;H01L29/772;H01L29/808;(IPC1-7):H01L21/337;H01L27/095;H01L29/80;H01L29/778;H01L21/338;H01L29/812 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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