| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
<p>The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a wiring made of a copper film or consisting mainly of the copper film. In structure, the barrier insulating film 34a, 38a comprises a double-layered structure or more which is provided with at least a first barrier insulating film 34aa, 38aa containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film 34ab, 38ab containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon. <IMAGE></p> |
| 申请公布号 |
EP1284500(A2) |
申请公布日期 |
2003.02.19 |
| 申请号 |
EP20020014072 |
申请日期 |
2002.07.01 |
| 申请人 |
CANON SALES CO., INC.;SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
IKAKURA, HIROSHI;SUZUKI, TOMOMI;MAEDA, KAZUO;SHIOYA, YOSHIMI;NISHIMOTO, YUHKO |
| 分类号 |
H01L21/3205;C23C16/40;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
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