发明名称 |
METHOD OF FABRICATING FLUX CONCENTRATING LAYER FOR USE WITH MAGNETORESISTIVE RANDOM ACCESS MEMORIES |
摘要 |
A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). The method includes the steps of depositing a bottom dielectric layer (32), an optional etch stop (34) layer, and a top dielectric layer (36) proximate the magnetic memory bit (10). A trench (38) is etched in the top dielectric layer (36) and the bottom dielectric layer (32). A first barrier layer (42) is deposited in the trench (38). Next, a metal system (29) is deposited on a surface of the first barrier layer (42). The metal system (29) includes a copper (Cu) seed material (44), and a plated copper (Cu) material (46), a first outside barrier layer (50), a flux concentrating layer (52), and a second outside barrier layer (54). The metal system (29) is patterned and etched to define a copper (Cu) damascene bit line (56). |
申请公布号 |
EP1284010(A2) |
申请公布日期 |
2003.02.19 |
申请号 |
EP20010920594 |
申请日期 |
2001.03.21 |
申请人 |
MOTOROLA, INC. |
发明人 |
DURLAM, MARK;CHEN, EUGENE, YOUJUN;TEHRANI, SAIED, N.;SLAUGHTER, JON, MICHAEL;KERSZYKOWSKI, GLORIA;KYLER, KELLY, WAYNE |
分类号 |
H01L27/105;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):H01L21/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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