发明名称 |
Transparent electrode film and group III nitride semiconductor device |
摘要 |
A transparent electrode film containing gold for covering the uppermost layer of a group III nitride semiconductor device has a first layer formed on the uppermost layer and not thicker than 15 Å, and a second layer formed on the first layer and containing gold. The first layer contains a first metal having an ionization potential lower than that of gold, and the second layer further contains a second metal having an ionization potential lower than that of gold.
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申请公布号 |
US6521999(B1) |
申请公布日期 |
2003.02.18 |
申请号 |
US20000604678 |
申请日期 |
2000.06.27 |
申请人 |
TOYODA GOSEI CO. LTD. |
发明人 |
UEMURA TOSHIYA;HORIUCHI SHIGEMI |
分类号 |
H01L21/28;H01L33/06;H01L33/32;H01L33/42;(IPC1-7):H01L23/48;H01L33/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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