| 摘要 |
There is provided a method of fabricating a semiconductor device, including the steps of (a) forming a first conductivity type base region in a second conductivity type collector region by molecular beam epitaxy (MBE), (b) forming an emitter region in the base region by implanting second conductivity type impurities into the base region by MBE; (c) forming a second conductivity type amorphous layer on the emitter region by MBE, and (d) forming an emitter contact region by causing the second conductivity type amorphous layer to grow in solid phase. The method makes it possible to establish not only a base region but also an emitter region in ambient temperature growth by means of an MBE apparatus. Herein, the emitter region has a shallow depth and uniform impurities content by implanting antimony (Sb) into a region with a substrate being applied a voltage directly in an MBE apparatus. Thus, it is no longer necessary to carry out thermal treatment at high temperature after the formation of a base region, resulting in prevention of degradation of crystallinity and prevention of changes in impurities depth profile.
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