| 发明名称 |
Non-orthogonal MRAM device |
| 摘要 |
An MRAM device (100) and method of manufacturing thereof having wordlines (112) that run non-orthogonal relative to bitlines (122), resulting in lower current and power consumption.
|
| 申请公布号 |
US6522579(B2) |
申请公布日期 |
2003.02.18 |
| 申请号 |
US20010818010 |
申请日期 |
2001.03.27 |
| 申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
HOENIGSCHMID HEINZ |
| 分类号 |
H01L27/105;G11C11/15;G11C11/16;H01L21/8246;H01L27/22;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
