发明名称 |
Electrically programmable memory cell |
摘要 |
The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.
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申请公布号 |
US6521942(B2) |
申请公布日期 |
2003.02.18 |
申请号 |
US20010928147 |
申请日期 |
2001.08.10 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
BOREL JOSEPH;SCHOELLKOPF JEAN-PIERRE;PAPADAS CONSTANTIN |
分类号 |
H01L21/336;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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