发明名称 Electrically programmable memory cell
摘要 The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.
申请公布号 US6521942(B2) 申请公布日期 2003.02.18
申请号 US20010928147 申请日期 2001.08.10
申请人 STMICROELECTRONICS S.A. 发明人 BOREL JOSEPH;SCHOELLKOPF JEAN-PIERRE;PAPADAS CONSTANTIN
分类号 H01L21/336;H01L29/423;(IPC1-7):H01L29/788 主分类号 H01L21/336
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