| 发明名称 |
Semiconductor growth method |
| 摘要 |
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes. |
| 申请公布号 |
US6521042(B1) |
申请公布日期 |
2003.02.18 |
| 申请号 |
US19960667660 |
申请日期 |
1996.06.21 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CELII FRANCIS G.;KATZ ALAN J.;KAO YUNG-CHUNG;MOISE THEODORE S. |
| 分类号 |
C30B23/08;C30B23/02;C30B29/68;H01L21/203;H01L21/338;H01L29/812;H01L29/88;(IPC1-7):C30B25/16 |
主分类号 |
C30B23/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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