发明名称 Single body injector and deposition chamber
摘要 A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus comprises a deposition chamber and a main chamber. The deposition chamber comprises at least one single injector and one or more exhaust channels. The main chamber supports the deposition chamber and includes at least one gas inlet to inject at least one gas into the main chamber. The gases are removed through the exhaust channels, thereby creating an inwardly flowing purge which acts to isolate the deposition chamber. At least one semi-seal is formed between the deposition chamber and the substrate which acts to confine reactive chemicals within each deposition region.
申请公布号 US6521048(B2) 申请公布日期 2003.02.18
申请号 US20010757542 申请日期 2001.01.09
申请人 ASML US, INC. 发明人 MILLER ADAM Q.;DOBKIN DANIEL M.
分类号 C03C17/00;C23C16/44;C23C16/455;(IPC1-7):C23C16/00;C23C1/00 主分类号 C03C17/00
代理机构 代理人
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