Method for forming non-volatile memory with self-aligned contact

摘要

A method for forming a non-volatile memory is disclosed. The invention uses elevated buried diffusion polysilicon layers (BDPOLY) and spacers to form self-aligned contact so that the process window can be upgraded. The spacers can be used as an etching stop layer so that the misalignment of contact holes will not present any process issues and device failures resulting from the etching of the contact holes.