发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In the drawn-out interconnection structure of the present invention, a storage node (SN) groove extending from a region, and a groove-shape drawn-out electrode is formed on the inner wall of storage node (SN) groove. An extended pad electrode portion extending from groove-shape drawn-out electrode is provided above storage node (SN) groove. Also provided is a contact plug that penetrates through extended pad electrode portion and that connects aluminum interconnection and extended pad electrode portion in a layer above extended pad electrode portion. With this arrangement, the structure of an interconnection drawn from an electrode of a semiconductor device can be obtained which allows the production of a cell transistor TEG capable of performing a reliable and stable measurement of the cell transistor characteristics.
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申请公布号 |
US6521933(B2) |
申请公布日期 |
2003.02.18 |
申请号 |
US20000725852 |
申请日期 |
2000.11.30 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MIYAJIMA TAKASHI;TAKEUCHI MASAHIKO |
分类号 |
H01L21/66;H01L21/3205;H01L21/768;H01L21/822;H01L21/8242;H01L23/52;H01L23/522;H01L27/04;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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