发明名称 Dynamic refresh that changes the physical storage locations of data in flash memory
摘要 A multi-bit-per-cell non-volatile memory performs refresh operations that move data to different physical storage locations. The movement of data may extend the life of a non-volatile memory by avoiding repetitive erasing and writing of the same data value in the same memory cell. A memory mapping circuit in the memory adjusts for different storage configuration that the refresh operations create. In particular embodiments, shifts sectors-sized data blocks cyclically among sectors in an array, a bank, or an entire memory or alternatively shifts the data blocks between two configurations.
申请公布号 US6522586(B2) 申请公布日期 2003.02.18
申请号 US20020107750 申请日期 2002.03.26
申请人 MULTI LEVEL MEMORY TECHNOLOGY 发明人 WONG SAU CHING
分类号 G11C11/56;G11C16/34;(IPC1-7):G11C16/06 主分类号 G11C11/56
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