Semiconductor device having dummy patterns for metal CMP

摘要

A gate electrode has a relatively long gate length of e.g., about 10 mum. In a region immediately above the gate electrode which is sandwiched between first-layer metals provided is a metal dummy pattern having a width in the first direction and extending in the second direction perpendicular to a direction of gate length (direction of current flow). Moreover, a geometric center of the metal dummy pattern in the second direction is equal to a geometric center of the gate electrode in the second direction. This maintains the symmetry in shape of the metal dummy pattern as viewed from the gate electrode. Such a structure can make deterioration in characteristics of a plurality of elements uniform while maintaining the essential effect of a metal CMP.