发明名称 |
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same |
摘要 |
A silicon-on-insulator (SOI) integrated circuit and a method of fabricating the SOI integrated circuit are provided. At least one isolated transistor active region and a body line are formed on an SOI substrate. The transistor active region and the body line are surrounded by an isolation layer which is in contact with a buried insulating layer of the SOI substrate. A portion of the sidewall of the transistor active region is extended to the body line. Thus, the transistor active region is electrically connected to the body line through a body extension. The body extension is covered with a body insulating layer. An insulated gate pattern is formed over the transistor active region, and one end of the gate pattern is overlapped with the body insulating layer.
|
申请公布号 |
US6521959(B2) |
申请公布日期 |
2003.02.18 |
申请号 |
US20010782116 |
申请日期 |
2001.02.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM YOUNG-WUG;KIM BYUNG-SUN;KANG HEE-SUNG;KO YOUNG-GUN;PARK SUNG-DAE;KIM MIN-SU;KIM KWANG-IL |
分类号 |
H01L29/786;(IPC1-7):H01L29/72 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|