| 发明名称 |
Semiconductor device and method of fabricating the same |
| 摘要 |
Obtained are a semiconductor device which can prevent diffusion of an impurity contained in a gate electrode and a method of fabricating the same. In this semiconductor device, a gate oxide film and a P+-type gate electrode which are formed on a P-type silicon substrate are doped with nitrogen.
|
| 申请公布号 |
US6521527(B1) |
申请公布日期 |
2003.02.18 |
| 申请号 |
US20010922663 |
申请日期 |
2001.08.07 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUROI TAKASHI;UENO SHUICHI;ODA HIDEKAZU;SHIMIZU SATOSHI |
| 分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L21/8247;H01L27/092;H01L27/115;H01L29/08;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
