Split gate memory cell with a floating gate in the corner of a trench

摘要

A memory cell and method for making a memory cell. The memory cell has a floating gate and a control gate, and a source region and a drain region. The structure of the device is such that the area of capacitive coupling between the floating gate and the source region is oriented along a sidewall of a trench formed in a substrate. The drain region is disposed under the bottom of the trench.