Thin-film semiconductor device fabrication method

摘要

In the thin-film semiconductor device fabrication method according to the present invention, after forming an amorphous semiconductor film, the film is crystallized in the solid phase state, then a portion of the semiconductor film is molten by irradiating it with a pulsed laser beam having an absorption coefficient in amorphous silicon that is greater than the absorption coefficient in polysilicon. Thereby, polycrystalline thin-film semiconductor devices having superior characteristics can be fabricated.