| 摘要 |
<p>PURPOSE: To improve a voltage holding rate and also to obtain high reliability by suppressing the OFF current of an TFT making an auxiliary capacitance electrode as a gate while specifying the voltage signal of the auxiliary capacitance electrode. CONSTITUTION: An auxiliary capacitance electrode voltage Vst is set to a level in which a constant width Vsf is pulled down from a common electrode voltage Vcom and a parastic TFT is reduced by constituting so that the voltage difference between the Vst and a drain voltage Vd and the voltage difference between the Vst and a source voltage Vs become equal to or lower than the threshold value of the TFT even in their maximums. Moreover, the voltage difference of the auxiliary capacitance electrode with respect to source and drain electrodes is restrained equal to or lower than the threshold value of the TFT in all periods by setting the center level of the voltage Vst equal to a gate L voltage VgL. Thus, since the OFF resistance of the TFT is not lowered by the field effect of the auxiliary electrode, the change in the source voltage Vs due to a leakage current is prevented, the decrease in a holding voltage V1c is restrained to increase the voltage holding rate.</p> |
