METHOD FOR ELIMINATING RESIDUAL PRODUCT IN PLASMA ETCHING APPARATUS

摘要

PURPOSE: A method for eliminating residual product in a plasma etching apparatus is provided to reduce the quantity of residual products falling on a wafer by controlling magnetic field strength within a coil. CONSTITUTION: Ambient gases are injected into a reaction chamber of a plasma- etching apparatus. Plasma is induced by RF oscillation and then the layer below photoresist pattern of a wafer is etched. After etching process, supply of etching gas is stopped and RF power is off but magnetic induction within a coil is maintained so that residual product such as polymer, is being drifted. After pumping out residual gas and byproduct from reaction chamber, the etching process is finished.