发明名称 APPARATUS FOR ETCHING SEMICONDUCTOR
摘要 PURPOSE: An apparatus for etching a semiconductor is provided to prevent a wafer from being inclined by a pressure difference between a process chamber and a gas supply line by uniformly maintaining the pressure of the process chamber and the gas supply line after an etch process is finished. CONSTITUTION: The process chamber has the first and second gas injection holes and a gas exhausting hole. The gas supply line is connected to the first gas injecting hole(113) of the process chamber. A gas supply unit(120) supplies the gas required by the process chamber. The first valve(130) performs a switching operation between the gas supply unit and the gas supply line. A pump makes the process chamber vacuum when the etch process of a semiconductor wafer is finished, connected to the gas exhausting hole of the process chamber. The second valve(140) performs a switching operation between the gas supply line and the second gas injecting hole(115) of the process chamber. The gas remaining in the gas supply line is exhausted to the process chamber by using the second valve when the etch process of the semiconductor wafer is finished.
申请公布号 KR20030013588(A) 申请公布日期 2003.02.15
申请号 KR20010047668 申请日期 2001.08.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, SANG U
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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