| 摘要 |
PURPOSE: To prevent an impurity ion different in at least one of the mass number and energy from an objective ion from being implanted in a target. CONSTITUTION: This ion implantation device is provided with an ion source 2 for extracting ions 8 by extraction voltage VE, an accelerating tube 12 for accelerating the ions from the ion source by accelerating voltage VA, and a momentum separating magnet 14 for selecting the ion having specific momentum in the ions from the accelerating tube, and is constituted so as to make the objective ion incident on the target 16. When the mass number of the objective ion is set to MI, the valence number is set to ZI, the mass number of the impurity ions paid attention in impurity ions generated on the upstream side of the accelerating tube is set to MC, and the valence number is set to ZC, when satisfying the mutually equal or almost equal relationship between a value MI.(VE+VA)/ZI and a value of MC.VA/ZC, while keeping a value of (VE+VA) almost constant, one of the extraction voltage VE and the accelerating voltage VA is increased, and the other is reduced.
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