| 摘要 |
PURPOSE: A substrate processing apparatus, a substrate support apparatus, a substrate processing method, and substrate manufacturing method are provided to surely two wafers contact intimately. CONSTITUTION: The first wafer is supported by a wafer support table(3) having an annular peripheral portion(3d). The substrate support table(3) is in contact with only the peripheral portion(3d) of the first wafer. While the second wafer opposing the first wafer is supported, the lower surface of the second wafer is pressed near its central portion, so the first and second wafers come into contact with each other outward from the central portion. The central portion(3c) of the wafer support table(3) is not in contact with the first wafer. Even when particles adhere to the central portion, unevenness on the supported first wafer can be prevented. Therefore, no gas is left between the wafers.
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