发明名称 METHOD OF FABRICATING SEMICONDUCTOR FOR SMOOTH DICING PROCESS
摘要 PURPOSE: A method of fabricating a semiconductor for smooth dicing process is provided to reduce chipping, crack and metal burr by applying photo-etching process even on a dummy region to eliminate metal on the edge of a wafer. CONSTITUTION: A dicing process is applied to a whole surface of a wafer including a dummy region. When a photo-etching process is not performed on metal on the region, the area has different malleability and ductility so that it causes chipping, crack and metal burr. When the photo-etching process is done even on the dummy area, metal material is completely eliminated so that bad production caused by different malleability and ductility can be avoided.
申请公布号 KR20030013885(A) 申请公布日期 2003.02.15
申请号 KR20010048130 申请日期 2001.08.10
申请人 STECO., LTD. 发明人 KWON, IL SU;OH, DONG YEOL
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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