发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR FOR SMOOTH DICING PROCESS |
摘要 |
PURPOSE: A method of fabricating a semiconductor for smooth dicing process is provided to reduce chipping, crack and metal burr by applying photo-etching process even on a dummy region to eliminate metal on the edge of a wafer. CONSTITUTION: A dicing process is applied to a whole surface of a wafer including a dummy region. When a photo-etching process is not performed on metal on the region, the area has different malleability and ductility so that it causes chipping, crack and metal burr. When the photo-etching process is done even on the dummy area, metal material is completely eliminated so that bad production caused by different malleability and ductility can be avoided.
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申请公布号 |
KR20030013885(A) |
申请公布日期 |
2003.02.15 |
申请号 |
KR20010048130 |
申请日期 |
2001.08.10 |
申请人 |
STECO., LTD. |
发明人 |
KWON, IL SU;OH, DONG YEOL |
分类号 |
H01L21/301;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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