发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 PURPOSE: To provide a flash memory which can discriminate a normal/defective condition of each sector without outputting a normal product code to the outside from a flash memory in which a normal product code is written in a normal product sector. CONSTITUTION: Transistors QL0-QL7 and QR0-QR7 are provided at both sides of sense latches SL0-SL7. When a normal product code 10101100 is latched by the sense latches SL7-SL0, a current sense amplifier 124 detects non- conduction of common drain lines 120, 121, thereby, it is discriminated whether a normal product code is written in each sector or not.
申请公布号 KR20030014104(A) 申请公布日期 2003.02.15
申请号 KR20020024920 申请日期 2002.05.07
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 HOSOGANE AKIRA
分类号 G01R31/28;G11C11/56;G11C16/02;G11C16/06;G11C16/26;G11C17/00;G11C29/12;G11C29/38;(IPC1-7):G11C16/06 主分类号 G01R31/28
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