| 摘要 |
PURPOSE: A GaN compound semiconductor laser diode and method of making the same is provided to radiate a laser beam having a stable mode characteristic, form a channel selectively so as to prevent decrease in a device, and to prevent decrease in a device characteristic according to a crystallization growth. CONSTITUTION: An n-type clad layer(142), an active layer(144), and the first p-type clad layer(146) are sequentially formed on an n-type compound semiconductor substrate(140). The first and second current blocking layers(148a,148b) are formed on the first p-type clad layer(146) and define a channel region where current for laser oscillation flows in to the active layer. The second p-type clad layer(150) is contact with the first p-type clad layer via the channel region and is extended onto the first and second current block layers. A p-type contact layer(152) is formed on the second p-type clad layer. An n-type electrode is attached on a lower surface of the substrate, and a p-type electrode is formed on the p-type contact layer.
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