NITRIDE SERIES SEMICONDUCTOR ELEMENT AND METHOD FOR FORMING NITRIDE SERIES SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a nitride series semiconductor element including a nitride series semiconductor layer having satisfactory crystallinity and electric properties. SOLUTION: The nitride series semiconductor element comprises: a plurality of mask layers 4 formed on a first GaN layer 3 at prescribed intervals so as to expose part of the first GaN layers 3 and SiCN hard to be transubstantiated under reduction atmosphere; and a second GaN layer 6 formed on the top face of the first GaN layer 3 and on the mask layer 4.