| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element wherein, related to an active layer having a prescribed composition to acquire a specified emission wavelength, a hetero structure where the crystal quality does not degrade with no change in laminating structure of the active layer is formed for raised emission efficiency in specified wavelength of the active layer. SOLUTION: A light-emitting layer 1 has a double hetero structure in which an n-type clad layer 2, an adjusting crystal layer 3, an active layer 4, and a p-type clad layer 5 are laminated together. The active layer 4 has a multiple quantum well structure or single quantum well structure in which a well layer 7 is sandwiched between barrier layers 6. The adjusting crystal layer 3 reduces the difference of lattice constant at a hetero junction interface formed with the well layer 7 and barrier layers 6 contained in the active layer 4. |
