| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem of a conventional photoelectric transfer device using crystalline semiconductor granules, having a low transfer efficiency. SOLUTION: In a method of manufacturing a photoelectric conversion device where after disposing and bonding many crystalline silicon granules 3 of a first conductive type on an aluminium substrate 1, a semiconductor layer 4 of the other conductive type is formed on the granular crystal silicon 3, a process of bonding the granular crystal silicon 3 to the substrate 1 comprises a first process of applying pressure to the granular crystal silicon 3 at 300 deg.C or lower, to make the granules 3 to sink into the substrate, and a second process of heating at a temperature between 600 deg.C and 660 deg.C, to weld the granular crystal silicon 3 to the substrate 1.</p> |
