| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element composed of a nitride semiconductor containing at least one of Al, Ga and In for which a dislocation density in an epitaxially grown semiconductor layer is reduced, and which can be used as a practical device such as an FET or an HEMT. SOLUTION: On a substrate 1, an AlN layer whose dislocation density is <=10<11> /cm<2> and half-value width in an X-ray locking curve on a (002) surface is <=90 seconds is epitaxially grown as the base layer 2. An n-GaN layer is epitaxially grown on the base layer 2 as a conductive layer 3, the dislocation density in the conductor layer 3 is turned to <=10<10> /cm<2> and the half-value width in the X-ray locking curve on the (002) surface is turned to <=150 seconds.
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