发明名称 WIRING FORMING METHOD UTILIZING DUAL DAMASCENE
摘要 PROBLEM TO BE SOLVED: To provide the forming method of electric wiring minimizing damage of a lower conductive pattern. SOLUTION: A first prevention film 32, a second prevention film 36 and a third insulating film 38 are formed on a first insulating film 30. A capping film 40 is formed on the third insulating film 38. Prescribed parts of the capping film 40, the third insulating film 38 and a second insulating film 34 are etched to form a via hole 42. A polymer film 46 is formed on the exposed first prevention film 32. The remaining capping film 40 and third insulating film 38 are continuously etched to form a trench. The first prevention film 32 exposed on the bottom face of a photoresist pattern 44, the polymer film 46 and the via hole 42 is removed.
申请公布号 JP2003045969(A) 申请公布日期 2003.02.14
申请号 JP20020203130 申请日期 2002.07.11
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM IL-GOO;HWANG JAE-SEUNG
分类号 H01L21/28;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L21/28
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