发明名称 |
WIRING FORMING METHOD UTILIZING DUAL DAMASCENE |
摘要 |
PROBLEM TO BE SOLVED: To provide the forming method of electric wiring minimizing damage of a lower conductive pattern. SOLUTION: A first prevention film 32, a second prevention film 36 and a third insulating film 38 are formed on a first insulating film 30. A capping film 40 is formed on the third insulating film 38. Prescribed parts of the capping film 40, the third insulating film 38 and a second insulating film 34 are etched to form a via hole 42. A polymer film 46 is formed on the exposed first prevention film 32. The remaining capping film 40 and third insulating film 38 are continuously etched to form a trench. The first prevention film 32 exposed on the bottom face of a photoresist pattern 44, the polymer film 46 and the via hole 42 is removed.
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申请公布号 |
JP2003045969(A) |
申请公布日期 |
2003.02.14 |
申请号 |
JP20020203130 |
申请日期 |
2002.07.11 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KIM IL-GOO;HWANG JAE-SEUNG |
分类号 |
H01L21/28;H01L21/3205;H01L21/768;(IPC1-7):H01L21/768;H01L21/320 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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