发明名称 PLASMA PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing system in which a plasma can be ignited under pressure conditions optimal for processing a substrate. SOLUTION: The plasma processing system 100a performing specified processing of a substrate 11 comprises a chamber 1 in which a plasma generation region 13 is formed and the substrate 11 is introduced, and an electron generating member 201 disposed in the chamber 1. The electron generating member 201 contains barium oxide, strontium oxide, calcium oxide, yttrium oxide, or the like.
申请公布号 JP2003045865(A) 申请公布日期 2003.02.14
申请号 JP20010233794 申请日期 2001.08.01
申请人 TOKYO ELECTRON LTD 发明人 NOZAWA TOSHIHISA;OTAO SHUICHIRO
分类号 H05H1/46;B01J19/08;C23C16/511;H01L21/302;H01L21/3065;H01L21/31 主分类号 H05H1/46
代理机构 代理人
主权项
地址