| 摘要 |
PROBLEM TO BE SOLVED: To provide a modularized thin and low power semiconductor device of high pressure-resistant specifications. SOLUTION: An insulating wall part 108 whose height is H3 and an insulation wall part 109 whose height is H4 (H4>H3) are arranged at the periphery of a face opposite to the base metallic substrate 106 of a power semiconductor module 10. Creepage distances for insulation and spatial distances between the parts of fitting bolts, which are at the same potential as that of the base metal substrate 106 and respective terminals 101, and the like are secured by the insulation wall parts 108 and 109. Thus, the module is miniaturized and thinned, and it can easily cope with changes in the rated specifications. |
