METHOD FOR MANUFACTURING II-VI GROUP DEVICE USING POROUS FILM AND ITS STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a II-VI group semiconductor material that has high quality and no defect even if a substrate and a semiconductor material formed thereon have lattice constants different to each other, and to provide its structure. SOLUTION: This device is provided with a porous layer pinched by a semiconductor substrate and a first semiconductor film and a second semiconductor film formed on the first semiconductor film, and the second semiconductor film contains a II-VI group compound semiconductor.