| 摘要 |
PROBLEM TO BE SOLVED: To decrease a film thinning of an upper layer resist pattern, when transferring the pattern to a lower layer resist film. SOLUTION: A lower layer resist film 2 is formed on a substrate 1, and an upper layer resist pattern containing silicon is formed on the lower layer resist film 2. The upper layer resist pattern is oxidized. With an oxidized upper layer resist pattern 61 used as a mask, a lower layer resist 2 is patterned by dry-etching. |
