| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of crystallizing a silicon by which a high quality crystal can be grown at a higher speed by proposing a method of crystallizing a transmission region, by utilizing a mask having a transmission region of a new form and a laser beam pattern through the mask. SOLUTION: There is provided a method of crystallizing a silicon, in particular, a method of prompting Sequential Lateral Solidification(SLS) of silicon grains in a low temperature silicon crystallization method utilizing a laser beam pattern. A laser beam pattern is formed in a triangular shape. When crystallization is proceeded while the beam pattern in a triangular shape is moved laterally, a large area can be crystallized at a high speed, and the growth length of grains constituting a crystalline film can be increased. Accordingly, productivity can be improved.
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