SUBSTRATE PROCESSING SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an IC while suppressing increase in manufacture cost and variation in the film thickness. SOLUTION: A heater 20 for heating a wafer group W held on a boat 11 in a processing tube 1 is zoned into first stage heater section 21 through seventh stage heater section 27 so that heating control is performed in correspondence with a carrier containing the wafer group W. When a smaller number of wafers W than the maximum number of wafers holderable on the boat 11 are processed, the wafers W are held being placed closely to the bottom of the boat 11 and the third heater section 23 through the sixth heater section 26 corresponding to the wafer W group of the boat 11 serve as a soaking zone while the first heater section 21, the second heater section 22 and the seventh heater section 27 serve as a thermal insulation zone. Since reaction in the thermal insulation zone can be prevented from having an effect on the soaking zone, accuracy of film thickness equal to that of an ordinary batch can be attained without using a dummy wafer causing cost increase even when the number of wafers being processed is decreased and an idle space is formed in the processing tube.